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 PN4250
Discrete POWER & Signal Technologies
PN4250
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
40 40 5.0 500 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
PN4250 625 5.0 83.3 200
Units
mW mW/C C/W C/W
(c) 1997 Fairchild Semiconductor Corporation
PN4250
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 5.0 mA, IB = 0 I C = 10 A, I B = 0 I C = 10 A, I E = 0 I E = 10 A, IC = 0 VCB = 40 V, I E = 0 VEB = 3.0 V, I C = 0 40 40 40 5.0 10 20 V V V V nA nA
ON CHARACTERISTICS*
hFE VCE(sat) DC Current Gain Collector-Emitter Saturation Voltage VCE = 5.0 V, I C = 100 A IC = 10 mA, IB = 0.5 mA 250 700 0.25 V
SMALL SIGNAL CHARACTERISTICS
Cob hie hoe hre NF Output Capacitance Input Impedance Output Admittance Voltage Feedback Ratio Noise Figure VCE = 5.0 V, I C = 250 A, RS = 1.0 k , f = 1.0 kHz, BW = 150 Hz VCE = 5.0 V, I C = 20 A, RS = 10 k, f = 1.0 kHz, BW = 150 Hz VCB = 5.0 V, f = 1.0 MHz VCE = 5.0 V, I C = 1.0 mA, f = 1.0 kHz 6.0 5.0 6.0 20 50 10 2.0 pF k mhos x10 dB
-4
2.0
dB
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%


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